Modern data centers, high-precision measurement systems and high-resolution radar sensors rely on extremely broadband amplifier chips that combine low noise with high output power. Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have developed a monolithic microwave integrated circuit (MMIC) with strong performance in these areas.

The distributed amplifier (DA) achieves a gain of 11 ± 2 dB at frequencies from 4 to 420 GHz. It is based on high-electron-mobility transistors (HEMTs) fabricated in the indium gallium arsenide (InGaAs) on silicon (InGaAs-on-Si) material system with a gate length of 20 nm. Previous generations of the chips were fabricated on gallium arsenide (GaAs) substrates with a gate length of 35 nm.

The MMIC was first presented in an article published last year in IEEE Microwave and Wireless Technology Letters.

High bandwidth with high output power and low noise

“The MMIC amplifier we developed is characterized by a unique combination of the relevant parameters: bandwidth, noise and output power. Up to a frequency of 202 GHz, it achieves noise figures between 3.2 and 7.7 dB; in a setting optimized for low noise, these range from 2.8 to 6.7 dB. The saturated output power ranges between 6 and 8 dBm,” explains Dr. Fabian Thome, developer of the MMIC and deputy head of the High-Frequency Electronics Business Unit at Fraunhofer IAF.

Broadband MMICs in practice: Data centers, measurement systems, radar sensors

Such high-bandwidth amplifiers are particularly relevant for the latest generation of data centers that use optical data transmission. They are used in interfaces that convert optical signals to electrical signals or electrical signals to optical signals. Optical data transmission enables higher speeds and more compact designs. The increasing prevalence of artificial intelligence applications is driving a sharp rise in demand for modern data centers.

In addition, high-bandwidth chips with low noise and high output power enable more precise measurement systems and higher-resolution radar sensors. Higher-performance chips increase the resolution, range and sensitivity of these systems.

At European Microwave Week (EuMW 2026), taking place in London from October 4 to 9, 2026, Fraunhofer IAF researchers will present exhibition samples of the amplifier chip as well as other innovations in high-frequency electronics at Booth B35. FormFactor, Inc., a collaborating measurement technology manufacturer, will demonstrate a live measurement of the chip at its booth (D10).

Who’s behind this story?

Lisa Lock

BA art history, MA material culture. Former museum editor, paramedic, and transplant coordinator. Editing for Science X since 2021.

Full profile →

Andrew Zinin

Master’s in physics with research experience. Long-time science news enthusiast. Plays key role in Science X’s editorial success.

Full profile →